Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: - Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials - All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework - Predictive capabilities of device models, discussed with systematic comparisons to experimental results
